Micro-machined structure production using encapsulation

ABSTRACT

Micro-machined (e.g., stress-engineered spring) structures are produced by forming a release layer, forming a partially or fully encapsulated beam/spring structure, and then releasing the beam/spring structure by etching the release layer. The encapsulation structure protects the beam/spring during release, so both the release layer and the beam/spring can be formed using plating and/or using the same material. The encapsulation structure can be metal, resist, polymer, oxide, or nitride, and may be removed after the release process, or retained as part of the completed micro-machined structure.

RELATED APPLICATIONS

This application is a divisional of U.S. patent application Ser. No.12/037,890, entitled “Micro-Machined Structure Production UsingEncapsulation” filed Feb. 26, 2008, issued as U.S. Pat. No. 7,730,615,which is a continuation of U.S. patent application Ser. No. 10/986,712,entitled “Micro-Machined Structure Production Using Encapsulation” filedNov. 12, 2004, now U.S. Pat. No. 7,356,920.

FIELD OF THE INVENTION

The present invention is directed to micro-machined structures, and inparticular to micro-machined structures in which a beam is supportedover a substrate surface such that an air-gap is defined between thebeam and the substrate.

BACKGROUND OF THE INVENTION

Photo lithographically patterned spring structures (sometimes referredto as “micro-springs”) represent one type of micro-machined structurethat has been developed, for example, to produce low cost probe cards,and to provide electrical connections between integrated circuits.Conventional spring structures include a spring metal finger (beam)having a flat anchor portion secured to a substrate, and a curved freeportion extending from the anchor portion and bending away from thesubstrate (i.e., such that an air-gap is defined between the tip of thespring metal finger and the substrate to which the anchor portion isattached). The spring metal finger is formed from a stress-engineeredmetal film (i.e., a metal film fabricated such that its lower portionshave a different internal compressive stress than its upper portions)that is at least partially formed on a release material layer. The freeportion of the spring metal finger bends away from the substrate whenthe release material located under the spring finger is etched away. Theinternal stress gradient is produced in the spring metal by layeringdifferent metals having the desired stress characteristics, or using asingle metal by altering the fabrication parameters. Such spring metalstructures may be used in probe cards, for electrically bondingintegrated circuits, circuit boards, and electrode arrays, and forproducing other devices such as inductors, variable capacitors, andactuated mirrors. For example, when utilized in a probe cardapplication, the tip of the spring is brought into contact with acontact pad formed on an integrated circuit, and signals are passedbetween the integrated circuit and test equipment via the probe card(i.e., using the spring metal structure as a conductor). Other examplesof such spring structures are disclosed in U.S. Pat. No. 3,842,189(Southgate) and U.S. Pat. No. 5,613,861 (Smith).

The stress-engineered metal films used to form conventional springstructures were originally formed by sputtering deposition methods, butmore recently plating deposition methods have been developed thatproduce suitable stress-engineered films. Those skilled in the art willappreciate the significant cost savings associated with using platingtechniques, as opposed to sputter techniques, to fabricate thestress-engineered films. However, although modifying the springproduction process to include plating the stress-engineered filmsreduces the overall costs significantly (i.e., no expensive stressedmetal sputter machine needed), the existing technology still relies ondepositing the release material by other methods such as sputtering(e.g., when titanium (Ti) is used as the release material) orplasma-enhanced-vapor-deposition (PECVD) (e.g., when silicon (Si) isused as the release material). Furthermore, a plating seed layer (e.g.,Au) is typically required to facilitate the plating process, and thisseed layer is typically sputter deposited over the release layer beforestressed-metal plating. Thus, although the ability to formstress-engineered spring structures using plating deposition techniquesreduces production costs, the need for expensive sputter depositionequipment is still required. Further, the ability to eliminate sputterdeposition and to implement a plating-only production process is verydifficult to achieve with the current spring materials due to thelimited material choice (e.g., nickel (Ni), copper (Cu), gold (Au),nickel-phosphorous (NiP) alloy or nickel-boron (NiB) alloy) for plating,and associated etch selectivity problems. Note that fabrication costsare especially important in the targeted application areas such aspackaging, probing and interconnects.

What is needed is a spring production method that utilizes platingdeposition techniques to form the release layer, plating seed layer(when used), and the spring (e.g., stress-engineered metal) film.

SUMMARY OF THE INVENTION

The present invention is directed to a method for producingmicro-machined (e.g., stress-engineered spring) structures in which abeam is supported over a substrate surface such that an air-gap isdefined between the beam and the substrate. In particular, the beam isformed on a sacrificial release layer, an encapsulation structure isformed on at least the side edges of the beam, and then the releaselayer material located under a portion of the beam is removed using anetchant to form the air-gap. The encapsulating structure is formed froma material that is not dissolved by the etchant, thereby preventingdamage to the beam/spring during the release process. The thickness ofthe encapsulation structure can be determined by the choice of materialsused. In one embodiment, the encapsulation material may be a metal(e.g., Au), resist, or a polymer formed to a thickness of 0.1 to 1 μm.Alternatively, the encapsulation layer may be relatively thin (e.g.,5-100 nm) and be formed from an oxide or nitride. The resultingmicro-machined structure includes the beam/spring supported such that anair-gap is formed between a portion of the beam/spring and theunderlying substrate.

In accordance with an aspect of the present invention, the encapsulatingmaterial facilitates the formation of the entire spring structure (i.e.,release layer, seed layer, and beam/spring) using relatively inexpensiveplating techniques. That is, conventional spring structure fabricationmethods required using relatively expensive sputtering techniques toform release layers, which increased overall production costs. Theencapsulation structure prevents etching/damage to the beam/springduring the release process, thus allowing etching of the release layerwithout risk to the beam/spring, thereby allowing the beam/spring to beformed using plated release materials, thus significantly reducingoverall manufacturing costs.

In accordance with another aspect of the present invention, theencapsulating material facilitates the formation of the release layerand the beam/spring using the same or similar materials. That is, byutilizing the encapsulation structure to prevent etching of thebeam/spring during release, selectivity problems associated with usingthe same release/spring material are avoided, thereby facilitating theformation of both the release layer and the beam/spring using the samematerial (e.g., a plated metal such as Ni, or a sputtered metal/alloysuch as MoCr). Alternatively, the beam may be formed using plated Ni oranother stress-engineered metal, and the release layer formed using NiPor NiB.

According to an embodiment of the present invention, the micro-machinedstructure comprises a spring structure produced using astress-engineered film that is deposited over the release layer usingthe methods mentioned above. After release, the stress-engineeredbeam/spring finger is bent using known mechanisms to form a curvedspring finger that can be used as a probe or interconnect structure. Inalternative embodiments, the micro-machined structure may include astraight (i.e., non-stress engineered) cantilevered beam structure orsimply supported air-bridge structure. The encapsulation structure canbe maintained on the beam as part of the completed micro-machinedstructure, or can be removed after the release process. In yet anotherembodiment, after the release process, the beam material may bepartially or fully etched or otherwise removed from the inside of a fullencapsulation structure, thereby leaving a hollow capillary structureformed solely by the encapsulation material.

BRIEF DESCRIPTION OF THE DRAWINGS

These and other features, aspects and advantages of the presentinvention will become better understood with regard to the followingdescription, appended claims, and accompanying drawings, where:

FIGS. 1(A) and 1(B) are perspective and cross-sectional side viewsshowing a spring-type micro-machined structure formed using theproduction method of the present invention;

FIG. 2 is an enlarged cross-sectional side view showing a portion of thespring structure of FIG. 1(A);

FIG. 3 is a simplified cross-sectional side view showing a secondmicro-machined structure formed using the production method of thepresent invention;

FIG. 4 is a simplified cross-sectional side view showing a thirdmicro-machined structure formed using the production method of thepresent invention;

FIG. 5 is a flow diagram showing a production method according to anembodiment of the present invention;

FIGS. 6(A), 6(B), 6(C) and 6(D) are cross-sectional side views showing aportion of a generalized micro-machined structure illustrating variousstages the production method of FIG. 5;

FIGS. 7(A), 7(B), 7(C), 7(D), 7(E) and 7(F) are cross-sectional sideviews showing a portion of a spring-type micro-machined structureillustrating various stages the production method of FIG. 5;

FIG. 8 is a cross-sectional side view showing a portion of amicro-machined structure including side-only encapsulation according toan embodiment of the present invention;

FIGS. 9(A), 9(B), 9(C), 9(D), 9(E), 9(F), 9(G), 9(H) and 9(I) arecross-sectional side views showing a portion of a spring-typemicro-machined structure illustrating various stages of a fullencapsulation production method according to another embodiment of thepresent invention;

FIGS. 10(A), 10(B), 10(C) and 10(D) are cross-sectional side viewsshowing a portion of a generalized micro-machined structure illustratingvarious stages of an oxide-based encapsulation production methodaccording to another embodiment of the present invention;

FIGS. 11(A), 11(B), 11(C) and 11(D) are cross-sectional side viewsshowing a portion of a generalized micro-machined structure illustratingvarious stages of a resist-based encapsulation production methodaccording to another embodiment of the present invention;

FIGS. 12(A), 12(B) and 12(C) are scanning electron microscopy (SEM)photographs showing spring structures formed in accordance with anembodiment of the present invention before removing the encapsulatingstructure;

FIGS. 13(A), 13(B) and 13(C) are SEM photographs showing the springstructures of FIGS. 12(A), 12(B) and 12(C), respectively, after removingthe encapsulating structure;

FIGS. 14(A), 14(B) and 14(C) are cross-sectional side views showingportions of a capillary-type micro-machined structure according toanother embodiment of the present invention;

FIG. 15 is a cross-sectional end view showing the capillary-typemicro-machined structure of FIG. 14(C);

FIGS. 16(A), 16(B) and 16(C) are cross-sectional end views showingvarious capillary-type micro-machined structures according to additionalembodiments of the present invention; and

FIGS. 17(A), 17(B) and 17(C) are cross-sectional side views showing theproduction of a probe-type micro-machined spring structure according toanother embodiment of the present invention.

DETAILED DESCRIPTION OF THE DRAWINGS

The present invention is directed to micro-machined structures in whicha beam structure is supported over a substrate surface in such a mannerthat an air-gap is defined between the beam and the substrate. As usedherein, the term “air-gap” refers to a region containing a vacuum or gas(e.g., air) that is formed between two substantially solid (e.g., metal)structures when a solid “sacrificial” material is removed (e.g., etched)from the region. The following paragraphs describe spring-type, straightcantilever type and air-bridge type micro-machined structures. Theproduction method associated with the present invention is thendescribed with particular reference to spring structures. However,unless otherwise specified in the claims, the production method isintended to cover any of the micro-machined structure types set forthbelow.

FIG. 1(A) is a perspective view showing a micro-machined springstructure 100-1, which represents one type of micro-machined structureformed in accordance with the method of the present invention. FIG. 1(B)is a cross-sectional side view showing spring structure 100-1 inadditional detail. Spring structure 100-1 includes a spring finger(beam) 120-1 that is mounted on a substrate 101 by way of a base section110-1 such that an air gap 115-1 is defined between substrate 101 and atleast a portion of spring finger 120-1. In particular, spring finger 120includes an anchor portion 122-1 attached to base section 110-1, and acurved free portion 125-1 that extends from anchor portion 122-1 and isseparated from substrate 101 by an angled air-gap region 115-1 (i.e., afirst gap adjacent to anchor portion 122-1, and a second (either largeror smaller) gap adjacent to free end (tip) 128). According to an aspectof the present invention, spring finger 120-1 is fabricated using astress-engineered metal film that facilitates selective and controllablebending of the spring structure. The term “stress-engineered metal” or“stressy metal” is defined herein as a sputtered or plated metal filmeither including a non-zero internal stress gradient, or anintermetallic metal film formed in accordance with co-owned andco-pending U.S. patent application Ser. No. 10/912,418, entitled“Intermetallic Spring Structure”, which is incorporated herein byreference. Spring metals may include non-metal components. In oneembodiment, the stress-engineered film is formed such that its lowermostportions (i.e., the deposited material adjacent to base section 110-1)have a lower internal tensile stress than its upper portions (i.e., thehorizontal layers located furthest from base section 110-1), therebycausing the stress-engineered metal film to have internal stressvariations that cause a spring metal finger to bend upward away fromsubstrate 101 during the subsequent release process.

FIG. 2 is a partial side view in which internal stress gradients aresuperimposed over portions of anchor portion 122-1 of spring structure100-1 for illustrative purposes. As indicated in the lower portion ofFIG. 2, unlike base section 110-1 which is formed without a significantstress gradient, anchor portion 122-1 is formed from a stress-engineeredmetal film (e.g., using sputtering or plating) that has a positivestress gradient Δσ+ (i.e., tending to bend the edges of anchor portion122-1 away from substrate 101). Methods for generating such internalstress variations in stress-engineered metal films are taught, forexample, in U.S. Pat. No. 3,842,189 (depositing two metals havingdifferent internal stresses) and U.S. Pat. No. 5,613,861 (e.g., singlemetal sputtered while varying process parameters), both of which beingincorporated herein by reference. In one embodiment, which utilizes a0.05-0.2 micron titanium (Ti) release material layer, astress-engineered metal film includes one or more of molybdenum (Mo), a“moly-chrome” alloy (MoCr), tungsten (W), a titanium-tungsten alloy(Ti:W), chromium (Cr), copper (Cu), nickel (Ni) and a nickel-zirconium(NiZr) alloy that are either sputter deposited or plated over therelease material in the manner described above to a thickness of 0.3-2.0micron. An optional metal layer (not shown; e.g., gold (Au), platinum(Pt), palladium (Pd), or rhodium (Rh)) may be deposited on the uppersurface of the stress-engineered metal film to act as a seed materialfor the subsequent plating process if the stress-engineered metal filmdoes not serve as a good base metal. The passivation metal layer mayalso be provided to improve the resistance and wear properties of thecompleted spring structure. In an alternative embodiment, a nickel (Ni),copper (Cu) or nickel-zirconium (NiZr) alloy film may be formed that canbe directly plated without a seed layer. If electroless plating is used,the deposition of the electrode layer can be omitted. When a downwardbending spring is desired, the positive stress gradient indicated inFIG. 2 is replaced with a negative stress gradient.

FIGS. 3 and 4 depict alternative micro-machined structures that may beformed using the production method of the present invention (discussedbelow). In FIG. 3, a straight cantilevered structure 100-2 includes abeam 120-2 having an anchor portion 122-2 mounted on a base section110-2, and a free portion 125-2 extending from anchor portion 122-2 andseparated from an underlying substrate 101 by an air-gap 115-2 in amanner similar to that described above. However, straight cantileveredstructure 100-2 differs from spring structure 100-1 in that beam 120-2is formed without an internal stress-gradient, and therefore remainsstraight after release. FIG. 4 shows a simply supported “air-bridge”structure 100-3 including a beam 120-3 supported at a first end 122-3Aby a first base section 110-3A, and at a second end 122-3B by a secondbase section 110-3B. A central freely supported section 125-3 of beam120-3 is suspended over an underlying substrate 101 such that an air-gap115-3 is defined therebetween.

A method for producing micro-machined structures according to thepresent invention is depicted in the flow diagram of FIG. 5, and isexplained by way of a specific example illustrated in FIGS. 6(A) through6(D). Referring to the top of FIG. 5 and to FIG. 6(A), the processbegins by forming a release layer 610 on/over substrate 101 (block 510).Next, as illustrated in FIG. 6(B), beam 120 is formed on/over releaselayer 610 such that beam 120 includes opposing side edges 121A, 121B andan upper surface 126 (block 520, FIG. 5). Next, as depicted in FIG.6(C), an encapsulation structure 620 is formed on beam/spring structure120 such that portions 621A and 621B respectively cover side edges 121Aand 121B of beam 120, respectively, and an optional upper portion 626 ofencapsulation structure 620 covers upper surface 126 of beam 120 (block530, FIG. 5). Note that, as established in the additional embodimentsset forth below, the formation of upper portion 626 of encapsulationstructure 620 is optional, and an additional lower encapsulation layerportion (not shown) may be provided between beam 120 and release layer610. Finally, as indicated in FIG. 6(D), an etchant 630 is used toremove the release material located under beam 120, thereby generatingan air gap 115 between a lower surface 127 of beam 120 and an uppersurface 102 of substrate 101. In particular, etchant 630 andencapsulation structure 620 are selected such that etching of beam 120is prevented in portions that are protected by encapsulation structure620 (i.e., at least side edges 121A and 121B, and upper surface 126 whenoptional upper portion 620 is provided. That is, release layer 610, beam120, encapsulation structure 620 and etchant 630 are selected such thatetchant 630 removes (dissolves) release layer 610, but cannot dissolveencapsulation structure 620, thereby preventing removal of beam 120. Theresulting micro-machined structure 100, shown in FIG. 6(D), is embodiedby any of the micro-machined structures described above (e.g., springstructure 100-1 (FIG. 1(A)), cantilevered beam structure 100-2 (FIG. 3),or bridge structure 100-3 (FIG. 4). In particular, the example depictedin FIG. 6(D) depicts a general case in which the resulting beamstructure does not bend away from the substrate upon release (e.g.,similar to the “straight” cantilever structure 100-2 (FIG. 3), the“air-bridge” structure 100-3 (FIG. 4), and spring structures thatrequire subsequent processing (e.g., annealing) to effect the bendingprocess). When conventional spring metals are used, air gap 115 shown inFIG. 6(D) is typically larger than the thickness of the etched releaselayer.

In accordance with an aspect of the present invention, the use ofencapsulation structure 620 in the manner described above facilitatesthe formation of release layer 610 using relatively inexpensive platingtechniques. That is, as described above, conventional spring structurefabrication methods required using relatively expensive sputteringtechniques to form release layers, which increased overall productioncosts. By using encapsulation material to prevent etching/damage to thebeam structure during the release process, etching of the release layermay proceed without risk to the beam structure, thus allowing the use ofmaterials produced by plating techniques (i.e., as opposed to theconventional sputtered release materials). Accordingly, because releasematerial layer 610 can be plated (as opposed to sputtered), the presentinvention facilitates the production of spring (micro-machined)structures in which both the release layer and the beam structure areformed by inexpensive plating techniques, thus significantly reducingoverall manufacturing costs.

In accordance with another aspect of the present invention, the use ofencapsulation structure 620 in the manner described above facilitatesthe formation of release layer 610 and beam 620 using substantially thesame material (e.g., both the release layer and beam are formed usingone of the common plating metals/alloys such as Ni, Cu, Au, NiP or NiB).As discussed above, this limited choice of suitable materials preventedplating both the release layer and beam structure by conventionalproduction methods due to problems associated with selectively etchingthe release layer while leaving the beam structure (i.e., it was notpossible to remove the release layer without etching the beam). Incontrast, by utilizing encapsulation layer 620 to prevent etching ofbeam 120 during release, the present invention eliminates theselectivity problem, thereby facilitating the formation of both therelease layer and the beam from a common material. As suggested above,in one embodiment both the release layer and the beam are formed by asingle plated material (e.g., both the release layer and the beamcomprise a Ni layer deposited by electroplating or electroless plating),thereby producing a relatively low-cost micro-machined structure.However, in another alternative embodiment, encapsulation structure 620also facilitates relatively low-cost sputtering production of releaselayer 610 and beam 120 in that both of these structures can be formedusing a single target (i.e., material source), thus greatly simplifyingthe sputtering process.

Various other features and aspects of forming micro-machined structuresusing encapsulation structures are also possible. For example, theencapsulation structure may be formed using one or more materialsselected for thickness, convenience, and/or durability characteristics.Moreover, as suggested above, the encapsulation structure can bemaintained on the beam as part of the completed micro-machinedstructure, the encapsulation structure can be removed after the releaseprocess, or the beam can be etched from the encapsulation layer toproduce a micro-machined structure formed by the encapsulationstructure. These and additional aspects and features associated withencapsulation structure formed in accordance with the present inventionare described with reference to the additional specific embodiments setforth below.

FIGS. 7(A) through 7(F) are simplified side views illustrating theproduction of a spring structure 100-1 (described above with referenceto FIGS. 1(A), 1(B) and 2) using the production method shown anddescribed with reference to FIGS. 6(A) to 6(D). Referring to FIG. 7(A),release layer 610 and stress-engineered beam 120-1 are formed using themethods mentioned above. As indicated in FIGS. 7(B) and 7(C), a releasemask (resist) 710 is formed according to known techniques over anchorportion 122 of beam 120-1, and encapsulation structure 620 is formedover free portion 125 of beam 120-1. In an alternative embodiment,encapsulation structure 620 may be formed over the entire beam beforeformation of release mask 710. Next, as shown in FIG. 7(D), the releasematerial located under free portion 125 is removed using etchant 630,thus forming an initial air-gap 115A caused in part by free portion 125bending upward due to the internal stress gradient of beam 120-1. Notethat, in addition to protection of beam 120-1 by encapsulation structure620, release mask 710 prevents the removal of a portion of release layer610 located under anchor portion 122, thereby forming base section110-1. FIG. 7(E) illustrates the subsequent removal of the release maskand encapsulation material, which causes further self-bending of beam120-1 to form a somewhat larger air gap 115B. FIG. 7(F) illustratesoptional further processing (e.g., annealing) that completes the bendingprocess and provides spring structure 100-1 with a final, maximum airgap 1150. These figures suggest that the bending process spontaneouslyoccurs upon release and removal of the encapsulation material (e.g.,characteristic of stress-engineered sputtered films). In an alternativeembodiment, beam 120-1 may be formed using plated Ni or anotherstress-engineered metal and the release layer formed using NiP or NiB,and self-bending may be almost entirely controlled by annealing (e.g.,after removal of the encapsulation layer). Moreover, the bending processmay not occur at all (e.g., in cases where the produced micro-machinedstructure includes a straight beam, such as in the examples describedabove with reference to FIGS. 3 and 4).

The generalized production method set forth in FIG. 5 may be used toperform the specific embodiments shown in FIGS. 6(A) to 6(D) and 7(A) to7(E) if the beam material shows anisotropic etching behavior (i.e., thebeam material is etched rapidly in the lateral direction (i.e., from thesides), but only slowly from the vertical direction (i.e., from thetop/bottom surfaces). Under such anisotropic etching conditions, it isalso possible to omit the release layer portion formed over the uppersurface of the beam (e.g., encapsulation layer portion 626, shown inFIG. 6(C)). The resulting encapsulation structure is shown in FIG. 8,where encapsulation portions 621A and 621B cover side edges 121A and121B, respectively, of beam 120, but upper surface 126 remains exposedto the etchant during the release process, which is not affected by theanisotropic etching process.

FIGS. 9(A) through 9(I) are simplified cross-sectional end viewsillustrating a method for producing a micro-machined structure usingfull encapsulation according to another embodiment of the presentinvention. Full encapsulation may be used, for example, when isotropicetching is utilized during the release process, but may also be used toproduce capillary structures (discussed below). Referring to FIG. 9(A),after forming release layer 610 (e.g., plated Ni) on substrate 101 inthe manner described above, a first mask 910 is lithographicallypatterned to define a window 915 exposing an upper surface area ofrelease layer 610 corresponding to the desired beam width. In FIG. 9(B),a lower encapsulation layer 920 (e.g., plated Au) is deposited throughwindow 915 onto the exposed area of release layer 610, and in FIG. 9(C)beam 120 (e.g., plated Ni) is formed on lower encapsulation layer 920.The first mask is then removed (FIG. 9(D)), and then a second mask 930is patterned on release layer 610 (FIG. 9(E)). Second mask 930 defines awindow 935 that is wider than beam 120, thereby exposing side edges 121Aand 121B of beam 120 and corresponding side edges of lower encapsulationlayer 920. In FIG. 9(F), an upper encapsulation structure 620 (e.g.,plated Au) is formed through window 935 over beam 120 such that, asdescribed above with reference to FIG. 6(C), portions of upperencapsulation structure 620 cover side edges 121A and 121B and uppersurface 126 of beam 120. Note that the lower side edges of upperencapsulation structure 620 are formed on the outer edges of lowerencapsulation layer 920, thereby forming a full encapsulation structure950 around beam 120. Lower encapsulation layer 920 and upperencapsulation layer 620 may be formed using the same or differentencapsulation materials. In FIG. 9(G), at least a portion of the secondmask is removed such that sections of release layer 610 located adjacentto beam 120 and full encapsulation structure 950 are exposed. An etchant960 is then utilized to remove this adjacent release material (FIG.9(H)), thereby forming air-gap 115 between lower encapsulation layer 910of full encapsulation structure 950 and upper surface 102 of substrate101. Finally, in FIG. 9(I), the full encapsulation structure isoptionally removed, thereby completing production of micro-springstructure 100. As set forth in the example above, an advantage of thefull encapsulation method is that micro-spring structure 100 may beformed using only two materials (e.g., Ni and Au), both of which can beformed using inexpensive plating techniques. Further, the high etchselectivity between beam 120 and release layer 610, which is required toproduce such structures using conventional methods, is not required inthe present embodiment due to the protection provided by fullencapsulation structure 950.

In accordance with yet another aspect of the invention, the thickness ofthe encapsulation structure can be determined by the choice of materialsused. For example, the encapsulation material may be relatively thick(e.g., 0.1-1 μm) and formed from a metal (e.g., Au), resist, or apolymer. Alternatively, the encapsulation layer may be relatively thin(e.g., 5-100 nm) and be made for example from oxides or nitrides.Moreover, as suggested above, the encapsulation layer can be maintainedon the beam as part of the completed micro-machined structure, or can beremoved after the release process. These and additional aspects andfeatures associated with encapsulation structure formed in accordancewith the present invention are described with reference to theadditional specific embodiments set forth below.

FIGS. 10(A) to 10(D) show another alternative embodiment in which anencapsulation structure includes an oxide or a nitride layer. In FIG.10(A), a release layer 610 is formed over substrate 101 and a beam 120is formed using the methods described above. Note that, unlike many ofthe preceding embodiments, release layer 610 and beam 120 are formedusing different materials. For example, release layer 610 is formedusing Ti, whereas beam 120 is formed using Ni or MoCr. In FIG. 10(B), anoxide-based or nitride-based encapsulation structure 1020 is formed(e.g., grown) on exposed surfaces (i.e., side edges 121A and 121B, andupper surface 126) of beam 120. In one embodiment, an oxide of the beammetal is grown by thermal oxidation using known techniques. In FIG.10(C), the release layer is then isotropically etched to release beam120 using an etchant 1030 to form air-gap 115, and in FIG. 10(D) theoxide/nitride-based encapsulation layer is removed using knowntechniques. An advantage of this embodiment is that formation of theencapsulation structure does not require an additional lithographicmask.

FIGS. 11(A) to 11(D) show another alternative embodiment in which anencapsulation structure includes a resist or a polymer that covers atleast a part of the release mask. In FIG. 11(A), a release layer 610 isformed over substrate 101 and a beam 120 is formed using the methodsdescribed above. Note that release layer 610 and beam 120 may be formedusing the same metal or different metals. In FIG. 11(B), a resist orpolymer encapsulation structure 1020 is formed (e.g., deposited viaspinning) on beam 120, and is patterned to include windows 1025 thatexpose portions of release layer 610 located adjacent to beam 120. InFIG. 11(D), the release layer is then isotropically etched using anetchant 1130 to release beam 120 to form air-gap 115, and in FIG. 11(D)the resist/polymer encapsulation layer is removed using knowntechniques. Similar to the oxide/nitride encapsulation embodiment, anadvantage of this embodiment is that formation of the encapsulationstructure may be performed during formation of the release mask, andthus does not require an additional lithographic step.

Prototypes of spring structures formed in accordance with the inventionwere produced by the inventors and inspected by SEM. To illustrate thepotential of the encapsulation method, the inventors used Ni as metalfor both release and spring layer. That is, only two materials wereneeded to produce the spring structures using the production method (onematerial for encapsulation, the other material for the release andspring layers). In a process using oxidation for encapsulation, it mayeven be possible to use only one material to produce a spring structure.FIGS. 12(A) to 12(C) show SEM images of encapsulated springs afterrelease etching. Note that the encapsulation structure is still inplace. The release layer in these examples is Ni deposited byelectroless plating (note that the Ni contains a few percent of P). Thespring metal is Ni deposited by electroplating. The encapsulationstructure is Au deposited by electroplating. The structure wasfabricated using the full encapsulation method described above. FIGS.13(A) to 13(C) show SEM images of the spring structures of FIGS. 12(A)to 12(C) after the encapsulation structure was removed by etching. Itwas observed during fabrication that an annealing step at 100-150° C.improves the sealing properties of the encapsulation structureconsiderably.

As set forth in the examples above, the encapsulation structure can bemaintained on the beam as part of the completed micro-machinedstructure, or can be removed after the release process. FIGS. 14(A) to14(C) show portions of a production method according to anotherembodiment in which a full encapsulation structure is retained to form apartial or full capillary structure. FIG. 14(A) shows a beam 120 that issupported on a base section 110 and has a full encapsulation structure950 formed thereon in the manner described above (upper layer 626 andlower layer 920 are shown), with the only difference being that maskingis used to prevent the formation of encapsulation material over tip 128.Note that beam 120 has bent away from substrate 101 due to themechanisms described above. In FIG. 14(B), an etchant 1430 removes thetip section of beam 120, thus defining a partial capillary 955 having afront opening 956. In FIG. 14(C), etching may continue and/or beperformed at both ends of encapsulation structure 950 to form acompletely hollow capillary (conduit) structure extending from frontopening 956 to a rear opening 957. Note that additional material mightbe deposited between beam 120 and encapsulation structure 950 tofacilitate the subsequent removal of beam 120.

FIG. 15 is a cross-sectional end view showing encapsulation/capillarystructure 950 in which rectangular capillary 955 is defined by lowerencapsulation layer 920, side walls 621A and 621B, and upperencapsulation layer 626. Those skilled in the art will recognize thatmultiple alternatives to the basic structure shown in FIG. 15 arepossible, and FIGS. 16(A), 16(B), and 16(C) are provided to illustrateexemplary alternative capillary structures. FIG. 16(A) shows a capillarystructure 950-2 including multiple capillaries 955-1 and 955-2 that areformed in the manner described above. FIG. 16(B) shows capillarystructure 950-2 with an additional material coating 960 that is providede.g., for channel stiffening passivation. FIG. 16(C) shows yet anotherexample in which an inner encapsulation structure 950-3, which defines afirst capillary 955-3, is formed inside of an outer encapsulationstructure 950-4, which defines a second capillary 955-4, such that firstcapillary 955-3 and second capillary 955-4 are concentric.

Spring encapsulation allows for very thick plated release layers, andhence spring structures might be fabricated on high wedges or pedestals.An example of such a process is illustrated in FIGS. 17(A) to 17(C),where a wedge-shaped release structure 1710 is deposited and patternedusing known techniques, and then a spring structure is formed thereon(FIG. 17(A)). A load layer 1740 is then formed on an anchor portion 1722of spring structure 1720 (FIG. 17(B)), and then the release structure isremoved (etched), causing the non-loaded free portion 1725 of springstructure 1720 to bend relative to the underlying substrate. Thismodified production method allows for different spring shapes that canbe of advantage for probing applications.

The use of stress-engineered metal tips as sliding-contact interconnectsrequires materials with high electrical conductivity (e.g., gold) whichare often prone to high wear. Adding a hard and durable coating to thetip on its sides could help improve wear resistance significantly. Thiscoating might be formed by one of the encapsulation structures describedabove, or might be deposited before or after encapsulation.

The encapsulation structure might be used to increase the functionalityof a spring structure. For example, the encapsulating material could bebio-reactive in order to interact with specific bio-agents. Of even moreimportance could be an encapsulating material that is not bio-reactiveto specified agents such that, when exposed to the material, thematerial will only attach to the exposed plane on the front tip of thespring.

Although the present invention has been described with respect tocertain specific embodiments, it will be clear to those skilled in theart that the inventive features of the present invention are applicableto other embodiments as well, all of which are intended to fall withinthe scope of the present invention. For example, the springencapsulation method might also be used to produce spring structures inwhich the stress-gradient of a stress-engineered film is produced suchthat the resulting bent beam structure points toward the substrateinstead of away from it. In this case, spring encapsulation and springdeposition is done first and the release layer is deposited onlyafterwards. Further, although the spring encapsulation method isespecially interesting for a plating process, it might also be used withother methods such as sputtering or PECVD.

1. A capillary structure comprising: a substrate; a hollow encapsulationstructure including an anchor portion attached to the substrate and afree end portion extending over the substrate and curving away from thesubstrate, wherein the hollow encapsulation structure comprises a lowerwall, an upper wall, and parallel side walls extending between the lowerwall and the upper wall such that the lower, upper and parallel sidewalls form a substantially rectangular cross-section forming a hollowconduit extending between a first opening defined at the free endportion and a second opening defined at the anchor portion, wherein thelower, upper and parallel side walls consist essentially of anencapsulation material such that said hollow encapsulation structure isformed solely by the encapsulation material, and wherein the hollowencapsulation structure further comprises a second upper wall and asecond pair of parallel side walls extending between the lower wall andthe second upper wall such that the lower wall, second upper wall andsecond pair of parallel side walls form a substantially rectangularcross-section forming a second hollow conduit.
 2. The capillarystructure of claim 1, further comprising an additional material coatingdisposed over the hollow encapsulation structure.
 3. A capillarystructure comprising: a substrate; a hollow encapsulation structureincluding an anchor portion attached to the substrate and a free endportion extending over the substrate and curving away from thesubstrate, wherein the hollow encapsulation structure comprises a lowerwall, an upper wall, and parallel side walls extending between the lowerwall and the upper wall such that the lower, upper and parallel sidewalls form a substantially rectangular cross-section forming a hollowconduit extending between a first opening defined at the free endportion and a second opening defined at the anchor portion, and whereinthe lower, upper and parallel side walls consist essentially of anencapsulation material such that said hollow encapsulation structure isformed solely by the encapsulation material; and an inner encapsulationstructure concentrically disposed inside the hollow conduit of thehollow encapsulation structure, the inner encapsulation structureincluding a second lower wall, a second upper wall, and parallel secondside walls extending between the second lower wall and the second upperwall such that the second lower, second upper and parallel second sidewalls form a substantially rectangular cross-section forming an innerhollow conduit.
 4. A capillary structure comprising: a first hollowcolumn and a second hollow column, both the first and second hollowcolumns having walls forming substantially rectangular cross-sections,wherein the first hollow column is located inside of the second hollowcolumn, and wherein both the first hollow column and the second hollowcolumn consist essentially of an encapsulation material such that saidcapillary structure is formed solely by the encapsulation material. 5.The capillary structure of claim 4, wherein the first hollow columnincludes a first lower wall, a first upper wall, and parallel first sidewalls extending between the first lower wall and the first upper wallsuch that the first lower wall, the first upper wall and the parallelfirst side walls form a first said substantially rectangularcross-section defining a first hollow conduit, and wherein the secondhollow column includes a second lower wall, a second upper wall, andparallel second side walls extending between the second lower wall andthe second upper wall such that the second lower wall, the second upperwall and the parallel second side walls form a second said substantiallyrectangular cross-section defining a second hollow conduit.
 6. Thecapillary structure of claim 5, wherein the first hollow column isconcentrically disposed inside the second hollow column such that thefirst lower wall is spaced from the second lower wall, the first upperwall is spaced from the second upper wall, and the parallel first sidewalls are spaced from the parallel second side walls.
 7. The capillarystructure of claim 5, wherein each of the first and second lower walls,the first and second upper walls, and the parallel first and second sidewalls comprises at least one of an oxide and a nitride.
 8. The capillarystructure of claim 7, wherein each of the first and second lower walls,the first and second upper walls, and the parallel first and second sidewalls has a thickness in the range of 5-100 nm.
 9. The capillarystructure of claim 5, wherein each of the first and second lower walls,the first and second upper walls, and the parallel first and second sidewalls comprises one of a resist layer and a polymer layer.
 10. Thecapillary structure of claim 9, wherein each of the first and secondlower walls, the first and second upper walls, and the parallel firstand second side walls has a thickness in the range of 0.1 to 1 μm. 11.The capillary structure of claim 5, wherein each of the first and secondlower walls, the first and second upper walls, and the parallel firstand second side walls comprises plate gold.
 12. A capillary structurecomprising: a substrate; a hollow encapsulation structure including ananchor portion attached to the substrate and a free end portionextending over the substrate and curving away from the substrate, thehollow encapsulation structure including: a first hollow columnincluding a first lower wall, a first upper wall, and parallel firstside walls extending between the first lower wall and the first upperwall such that the first lower wall, the first upper wall and theparallel first side walls form a first substantially rectangularcross-section defining a first hollow conduit, and a second hollowcolumn including a second lower wall, a second upper wall, and parallelsecond side walls extending between the second lower wall and the secondupper wall such that the second lower wall, the second upper wall andthe parallel second side walls form a second substantially rectangularcross-section defining a second hollow conduit, wherein the first hollowcolumn is located inside of the second hollow column.
 13. The capillarystructure of claim 12, wherein the first hollow column is concentricallydisposed inside the second hollow column such that the first lower wallis spaced from the second lower wall, the first upper wall is spacedfrom the second upper wall, and the parallel first side walls are spacedfrom the parallel second side walls.
 14. The capillary structure ofclaim 12, wherein each of the first and second lower walls, the firstand second upper walls, and the parallel first and second side wallsconsists essentially of a single encapsulation material such that saidhollow encapsulation structure is formed solely by the encapsulationmaterial.